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| AOB416 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pbfree (meets ROHS & Sony 259 specifications). AOB416L is a Green Product ordering option. AOB416 and AOB416L are electrically identical. Features VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4.5m (VGS = 10V) @ 30A RDS(ON) < 6.5m (VGS = 4.5V) @ 30A TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C C Maximum 30 20 110 78 200 30 140 100 50 3.1 2 -55 to 175 Units V V A A mJ W W C TC=25C G TC=100C B ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJL Typ 8.1 33 0.84 Max 12 40 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOB416 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=30A TJ=125C 1.2 110 3.5 5.3 5.15 94 0.64 1 110 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.45 96.4 VGS=4.5V, VDS=15V, ID=30A 46.4 13.6 16 15.5 VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/s 28.2 52.5 31 31.2 19.3 4.5 6.5 6.5 1.8 Min 30 1 5 100 2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 4 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID(A) 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 10V 4.5V 3.5V VGS=3V 40 ID(A) 125C 30 20 10 0 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 2 4 25C 60 50 VDS=5V 6.0 5.5 RDS(ON) (m) 5.0 4.5 4.0 VGS=10V 3.5 3.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 12 VGS=4.5V 1.8 Normalized On-Resistance ID=30A 1.6 1.4 VGS=4.5V VGS=10V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 10 ID=30A RDS(ON) (m) 8 125C 6 1.0E+00 IS (A) 1.0E-01 1.0E-02 25C 1.0E-03 4 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2 125C 2 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) VDS=15V ID=30A Capacitance (pF) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 6 4 2 1000 RDS(ON) limited 100 ID (Amps) 1ms Power (W) 10ms 0.1s 10 1s 10s 1 T J(Max)=150C T A=25C DC 100s 200 160 120 80 40 0 0.01 100 T J(Max)=150C T A=25C 0.1 1 10 100 1000 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse T on T 0.001 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current T A=25C 100 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - VDD Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. Power Dissipation (W) |
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